Effect of Annealing in Ar/H2 Environment on Chemical Vapor Deposition-Grown Graphene Transferred With Poly (Methyl Methacrylate)

被引：35
作者：
Choi, Woosuk [1 ,2 ]
Seo, Young-Soo [1 ,2 ]
Park, Jun-Young [1 ,2 ]
Kim, K. B. [1 ,2 ]
Jung, Jongwan [1 ,2 ]
Lee, Naesung [1 ,2 ]
Seo, Yongho [1 ,2 ]
Hong, Suklyun [2 ,3 ]
机构：
[1] Sejong Univ, Hybrid Mat Ctr, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea
[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[3] Sejong Univ, Dept Phys, Seoul 143747, South Korea
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2015年 / 14卷 / 01期
关键词：
Annealing; chemical vapor deposition (CVD) graphene; graphene transfer; Raman spectroscopy; RAMAN-SPECTROSCOPY; BORON-NITRIDE; LITHOGRAPHY; SCATTERING;
D O I：
10.1109/TNANO.2014.2365208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Poly(methyl methacrylate) (PMMA) is widely used for transferring chemical vapor deposition grown graphene. The residue of PMMA after the transfer degrades the electronic properties of the graphene, and the complete removal of PMMA has been a challenging issue. Annealing in Ar/H-2 gas flow has been commonly adopted to remove the PMMA residue. We studied the effect of annealing on graphene in the wide temperature range of 350-800 degrees C using Ar/H-2 forming gas, systematically. The conductivity was increased at moderate temperatures, but decreased at excessive temperatures higher than 650 degrees C. On the other hand, the PMMA residue was not removed effectively in all temperature ranges, judging from Raman spectroscopy and atomic force microscopy. By analyzing Raman spectroscopic data, chemisorption of PMMA residue on graphene was confirmed.
引用
收藏
页码：70 / 74
页数：5
相关论文
共 30 条
[21]   Tunable stress and controlled thickness modification in graphene by annealing [J].
Ni, Zhen Hula ;
Wang, Hao Min ;
Ma, Yun ;
Kasim, Johnson ;
Wu, Yi Hong ;
Shen, Ze Xiang .
ACS NANO, 2008, 2 (05) :1033-1039
[22]   Electric field effect in atomically thin carbon films [J].
Novoselov, KS ;
Geim, AK ;
Morozov, SV ;
Jiang, D ;
Zhang, Y ;
Dubonos, SV ;
Grigorieva, IV ;
Firsov, AA .
SCIENCE, 2004, 306 (5696) :666-669
[23]   The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2 [J].
Pirkle, A. ;
Chan, J. ;
Venugopal, A. ;
Hinojos, D. ;
Magnuson, C. W. ;
McDonnell, S. ;
Colombo, L. ;
Vogel, E. M. ;
Ruoff, R. S. ;
Wallace, R. M. .
APPLIED PHYSICS LETTERS, 2011, 99 (12)
[24]   Breakdown of the adiabatic Born-Oppenheimer approximation in graphene [J].
Pisana, Simone ;
Lazzeri, Michele ;
Casiraghi, Cinzia ;
Novoselov, Kostya S. ;
Geim, A. K. ;
Ferrari, Andrea C. ;
Mauri, Francesco .
NATURE MATERIALS, 2007, 6 (03) :198-201
[25]   Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate [J].
Ryu, Sunmin ;
Liu, Li ;
Berciaud, Stephane ;
Yu, Young-Jun ;
Liu, Haitao ;
Kim, Philip ;
Flynn, George W. ;
Brus, Louis E. .
NANO LETTERS, 2010, 10 (12) :4944-4951
[26]   Detection of individual gas molecules adsorbed on graphene [J].
Schedin, F. ;
Geim, A. K. ;
Morozov, S. V. ;
Hill, E. W. ;
Blake, P. ;
Katsnelson, M. I. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (09) :652-655
[27]   Enhancement of the Electrical Properties of Graphene Grown by Chemical Vapor Deposition via Controlling the Effects of Polymer Residue [J].
Suk, Ji Won ;
Lee, Wi Hyoung ;
Lee, Jongho ;
Chou, Harry ;
Piner, Richard D. ;
Hao, Yufeng ;
Akinwande, Deji ;
Ruoff, Rodney S. .
NANO LETTERS, 2013, 13 (04) :1462-1467
[28]   Low Partial Pressure Chemical Vapor Deposition of Graphene on Copper [J].
Sun, Jie ;
Lindvall, Niclas ;
Cole, Matthew T. ;
Angel, Koh T. T. ;
Wang, Teng ;
Teo, Kenneth B. K. ;
Chua, Daniel H. C. ;
Liu, Johan ;
Yurgens, August .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2012, 11 (02) :255-260
[29]  
Xue JM, 2011, NAT MATER, V10, P282, DOI [10.1038/nmat2968, 10.1038/NMAT2968]
[30]   The production of a cellular graphene array by scanning probe lithography and its ability to store electrical charge [J].
Yong, Hyeondeuk ;
Kim, Kiyeol ;
Choi, Wooseok ;
Park, Joonkyu ;
Ahmad, Muneer ;
Seo, Yongho .
CARBON, 2012, 50 (12) :4640-4647
123