Density functional calculation for growth of GaN on graphite as 3D growth on 2D material

被引：6

作者：

Ishii, Akira ^{[1
]}

Tatani, Takaaki ^{[1
]}

Nakada, Kengo ^{[1
]}

机构：

[1] Tottori Univ, Dept Appl Math & Phys, Tottori 680, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5 | 2011年 / 8卷 / 05期

关键词：

GaN film; growth; structure; density functional calculation;

D O I：

10.1002/pssc.201000918

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density functional calculation is performed to determine the structure of the grown GaN film on graphite substrate for comparison with experimental results using pulsed laser deposition method. The predicted result for polarity of the grown GaN is the nitrogen-terminated face, (0001) and it agrees with experiment. Since graphite is the 2 dimensional material having very weak interaction between layers, graphite is considered to be an ideal lattice mismatch free substrate for heteroepitaxial growth. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1585 / 1588

页数：4

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