Ion implantation synthesized copper oxide-based resistive memory devices

被引：13

作者：

Bishop, S. M. ^{[1
]}

Bakhru, H. ^{[1
]}

Novak, S. W. ^{[1
]}

Briggs, B. D. ^{[1
]}

Matyi, R. J. ^{[1
]}

Cady, N. C. ^{[1
]}

机构：

[1] SUNY Albany, CNSE, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 20期

关键词：

Copper oxides;

D O I：

10.1063/1.3662036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Copper oxide resistive memory layers have been synthesized by ion implantation. Devices fabricated from off-stoichiometric Cu2O exhibited unipolar switching in forward/reverse bias without a forming voltage. The on-state conduction of these devices is likely dominated by a metallic filament, which ruptures via Joule heating to transition the device to the high resistance off-state. Technology scaling was achieved by oxygen implanting copper filled vias. The resulting via-based memory devices exhibited unipolar resistive switching down to 48 nm in diameter. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662036]

引用

页数：3

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