Residual stress in Ni-Mn-Ga thin films deposited on different substrates

被引：28

作者：

Doyle, S. ^{[1
]}

Chernenko, V. A. ^{[2
,3
]}

Besseghini, S. ^{[3
]}

Gambardella, A. ^{[3
]}

Kohl, M. ^{[4
]}

Muellner, P. ^{[5
]}

Ohtsuka, M. ^{[6
]}

机构：

[1] Forschungszentrum Karlsruhe, ANKA, D-76021 Karlsruhe, Germany

[2] Inst Magnetism, UA-03142 Kiev, Ukraine

[3] CNR, IENI, I-23900 Lecce, Italy

[4] Forschungszentrum Karlsruhe, IMT, D-76021 Karlsruhe, Germany

[5] Boise State Univ, Dept Mat Sci & Engn, Boise, ID 83725 USA

[6] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan

来源：

EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS | 2008年 / 158卷 / 1期

关键词：

D O I：

10.1140/epjst/e2008-00660-8

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Four series of Ni(51.4)Mn(28.3)Ga(20.3)/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni(53.5)Mn(23.8)Ga(22.7)/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 mu m have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d(220) is studied for the films deposited on Si(100).

引用

页码：99 / 105

页数：7

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