Influence of Thermal and Gamma Radiation on Electrical Properties of Thin NiO Films Formed by RF Sputtering

被引：3

作者：

Guziewicz, M. ^{[1
]}

Jung, W. ^{[1
]}

Grochowski, J. ^{[1
]}

Borysiewicz, M. ^{[1
]}

Golaszewska, K. ^{[1
]}

Kruszka, R. ^{[1
]}

Witkowski, B. S. ^{[2
]}

Domagala, J. ^{[1
,2
]}

Gryzinski, M.

Tyminska, K. ^{[3
]}

Tulik, P. ^{[3
]}

Piotrowska, A. ^{[1
]}

机构：

[1] Inst Electr Mat Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Inst Atom Energy, PL-05400 Otwock, Poland

来源：

EUROSENSORS XXV | 2011年 / 25卷

关键词：

Nickel oxide; thin films; transparent semiconductor; gamma radiation;

D O I：

10.1016/j.proeng.2011.12.090

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Electrical properties of p-NiO films fabricated by RF magnetron sputtering were characterized after deposition, heat treatment in oxygen or argon and after irradiation using 660 keV photons. The results show, that resistivity of the NiO film is strongly increased after thermal processes in Ar and gradually increased after subsequent irradiation processes because of the decrease of holes concentration. (C) 2011 Published by Elsevier Ltd.

引用

页数：4

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