Phonons in III-V nitrides: Confined phonons and interface phonons

被引：22
作者：
Dutta, M
Alexson, D
Bergman, L
Nemanich, RJ
Dupuis, R
Kim, KW
Komirenko, S
Stroscio, M
机构：
[1] USA, Res Off, Army Res Lab, Res Triangle Pk, NC 27709 USA
[2] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
[3] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA
[4] Univ N Carolina, Dept Phys, Chapel Hill, NC 27514 USA
[5] Univ Idaho, Dept Phys, Moscow, ID 83844 USA
[6] Univ Texas, Dept Elect & Comp Engn, Austin, TX 78712 USA
来源：
PHYSICA E | 2001年 / 11卷 / 2-3期
基金：
美国国家科学基金会;
关键词：
confined optical phonons; Raman scattering; wurtzites; nitrides;
D O I：
10.1016/S1386-9477(01)00217-X
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Phonons in III-V nitrides are examined experimentally for dimensionally confined systems and for alloys of InGaN with a view towards understanding the phonon modes of these systems. Results are compared with the predictions of Loudon's model for uniaxial semiconductors. The modes of the InGaN system are compared with those of the AlGaN ternary alloy. The first Raman measurements of interface phonons in binary GaN-AlN superlattices are presented. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：277 / 280
页数：4
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