Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

被引：43

作者：

Jang, Y. D. ^{[1
]}

Badcock, T. J. ^{[1
]}

Mowbray, D. J. ^{[1
]}

Skolnick, M. S. ^{[1
]}

Park, J. ^{[2
]}

Lee, D. ^{[2
]}

Liu, H. Y. ^{[3
]}

Steer, M. J. ^{[4
]}

Hopkinson, M. ^{[4
]}

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[3] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[4] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr Technol 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 25期

基金：

英国工程与自然科学研究理事会; 新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2949741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier lifetimes have been measured for long-wavelength emitting InAs quantum dots (QDs) capped with a thin GaAsSb layer. Above a critical Sb composition, a type-II system is formed, resulting in an increase in the carrier lifetime. The carrier lifetime in a strongly type-II structure is increased by a factor similar to 54 in comparison to the lifetime in a type-I structure. In addition, the type-II carrier lifetime varies across the inhomogeneously broadened ground-state emission, while the type-I QD lifetime is invariant. (C) 2008 American Institute of Physics.

引用

页数：3

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