Some properties of GeTe-based thermoelectric alloys

被引：8

作者：

Sharp, JW ^{[1
]}

机构：

[1] Marlow Ind Inc, Dallas, TX 75238 USA

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287500

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The semiconductor alloy system (GeTe)(1-x),(AgSbTe2)(x), known as TAGS, is a family of highly degenerate P-type materials with peak ZT well above room temperature. For instance, when x = 0.15, ZT is about 1.4 at 773 K, but is only similar to0.2 at 300 K with a Seebeck coefficient less than 100 muV/K. We revisit this familiar material and some related alloys with regard to their potential for operation at lower temperatures. We are seeking improved room-teniperature electrical properties and, consequently, improved figure of merit.

引用

页码：267 / 270

页数：4

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