Magnetization-graded ferromagnets: The magnetic analogs of semiconductor junction elements

被引：36

作者：

Mantese, JV

Micheli, AL

Schubring, NW

Hayes, RW

Srinivasan, G

Alpay, SP ^{[1
]}

机构：

[1] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA

[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA

[3] Oakland Univ, Dept Phys, Rochester, MI 48309 USA

[4] Delphi Res Labs, Shelby Township, MI 48315 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2012526

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compositionally graded ferrites are formed as the magnetic analogs of semiconductor junction devices. The internal, or the "built-in," magnetic field is intrinsic to the structure and is determined from ferromagnetic resonance microscopy. Magnetic analysis of a nickel-zinc-ferrite system in terms of its spatially dependent order parameter, the magnetization, yields a value for the internal magnetic field consistent with experimental observations. Our results are extended to the general class of ferroic and other "smart" materials via a spatially dependent free-energy potential. (c) 2005 American Institute of Physics.

引用

页数：3

共 11 条

[1] Fundamentals of graded ferroic materials and devices [J].