Above-room-temperature strong intrinsic ferromagnetism in 2D van der Waals Fe3GaTe2 with large perpendicular magnetic anisotropy

被引:285
作者
Zhang, Gaojie [1 ,2 ]
Guo, Fei [3 ]
Wu, Hao [1 ,2 ]
Wen, Xiaokun [1 ,2 ]
Yang, Li [1 ,2 ]
Jin, Wen [1 ,2 ]
Zhang, Wenfeng [1 ,2 ,4 ]
Chang, Haixin [1 ,2 ,3 ,4 ]
机构
[1] Huazhong Univ Sci & Technol, Ctr Joining & Elect Packaging, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mold Technol, Wuhan 430074, Peoples R China
[2] Huazhong Univ Sci & Technol, Inst Quantum Sci & Engn, Wuhan 430074, Peoples R China
[3] Guangxi Univ Sci & Technol, Sch Microelect & Mat Engn, Liuzhou Key Lab New Energy Vehicle Lithium Batter, Liuzhou 545006, Peoples R China
[4] Huazhong Univ Sci & Technol HUST, Shenzhen R&D Ctr, Shenzhen 518000, Peoples R China
基金
中国国家自然科学基金;
关键词
CRYSTAL;
D O I
10.1038/s41467-022-32605-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The absence of two-dimensional (2D) van der Waals (vdW) ferromagnetic crystals with both above-room-temperature strong intrinsic ferromagnetism and large perpendicular magnetic anisotropy (PMA) severely hinders practical applications of 2D vdW crystals in next-generation low-power magnetoelectronic and spintronic devices. Here, we report a vdW intrinsic ferromagnetic crystal Fe3GaTe2 that exhibits record-high above-room-temperature Curie temperature (T-c, similar to 350-380 K) for known 2D vdW intrinsic ferromagnets, high saturation magnetic moment (40.11 emu/g), large PMA energy density (similar to 4.79 x 10(5)J/m(3)), and large anomalous Hall angle (3%) at room temperature. Such large room-temperature PMA is better than conventional widely-used ferromagnetic films like CoFeB, and one order of magnitude larger than known 2D vdW intrinsic ferromagnets. Room-temperature thickness and angledependent anomalous Hall devices and direct magnetic domains imaging based on Fe3GaTe2 nanosheet have been realized. This work provides an avenue for room-temperature 2D ferromagnetism, electrical control of 2D ferromagnetism and promote the practical applications of 2D-vdW-integrated spintronic devices.
引用
收藏
页数:8
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