Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1-xO2 (0≤x≤1) films prepared by the ALD method

被引：31
作者：
Atuchin, V. V. [1 ,2 ]
Lebedev, M. S. [3 ]
Korolkov, I. V. [4 ,5 ]
Kruchinin, V. N. [6 ]
Maksimovskii, E. A. [3 ,5 ]
Trubin, S. V. [7 ]
机构：
[1] SB RAS, Inst Semicond Phys, Lab Opt Mat & Struct, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Lab Semicond & Dielect Mat, Novosibirsk 630090, Russia
[3] SB RAS, Nikolaev Inst Inorgan Chem, Lab Funct Films & Coatings, Novosibirsk 630090, Russia
[4] SB RAS, Nikolaev Inst Inorgan Chem, Lab Crystal Chem, Novosibirsk 630090, Russia
[5] Novosibirsk State Univ, Lab Res Methods Composit & Struct Funct Mat, Novosibirsk 630090, Russia
[6] SB RAS, Inst Semicond Phys, Lab Ellipsometry Semicond Mat & Struct, Novosibirsk 630090, Russia
[7] SB RAS, Nikolaev Inst Inorgan Chem, Lab Chem Volatile Coordinat & Metallorgan Cpds, Novosibirsk 630090, Russia
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 01期
关键词：
ATOMIC LAYER DEPOSITION; RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRONIC-STRUCTURE; ELECTRICAL-PROPERTIES; PROCESS TEMPERATURE; TITANIUM-DIOXIDE; TIO2; FILMS; GATE; SILICON; HFO2;
D O I：
10.1007/s10854-018-0351-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optical quality HfxTi1-xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)(4), TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E=1.12-4.96eV. The specific growth kinetics is observed for 0<x<1. The optical constants wide-range tuning is reached in the HfxTi1-xO2 (x=0-1) films via the chemical composition variation and annealing.
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收藏
页码：812 / 823
页数：12
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