A CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction coupled to an in-plane exchange-biased magnetic layer

被引：6

作者：

Zhu, M. ^{[1
]}

Chong, H.

Vu, Q. B.

Vo, T.

Brooks, R.

Stamper, H.

Bennett, S.

Piccirillo, J.

机构：

[1] SUNY Albany, Coll Nanoscale Sci, Polytech Inst, Albany, NY 12203 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 21期

关键词：

ANISOTROPY;

D O I：

10.1063/1.4921967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a stack structure which utilizes an in-plane exchange-biased magnetic layer to influence the coercivity of the bottom CoFeB layer in a CoFeB/MgO/CoFeB perpendicular magnetic tunnel junction. By employing a thickness wedge deposition technique, we were able to study various aspects of this stack using vibrating sample magnetometer including: (1) the coupling between two CoFeB layers as a function of MgO thickness; and (2) the coupling between the bottom CoFeB and the in-plane magnetic layer as a function of Ta spacer thickness. Furthermore, modification of the bottom CoFeB coercivity allows one to measure tunneling magnetoresistance and resistance-area product (RA) of CoFeB/MgO/CoFeB in this pseudo-spin-valve format using current-in-plane-tunneling technique, without resorting to (Co/Pt) n or (Co/Pd) n multilayer pinning. (C) 2015 AIP Publishing LLC.

引用

页数：4

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