Low-temperature metalorganic vapor phase epitaxy (MOVPE) of GaN using tertiarybutylhydrazine

被引：13
作者：
Pohl, UW
Knorr, K
Möller, C
Gernert, U
Richter, W
Bläsing, J
Christen, J
Gottfriedsen, J
Schumann, H
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] Otto Von Guericke Univ, Inst Phys Expt, D-39016 Magdeburg, Germany
[3] Tech Univ Berlin, Inst Anorgan & Analyt Chem, D-10623 Berlin, Germany
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 2A期
关键词：
MOVPE; GaN; GaAs substrate; tertiarybutylhydrazine; low temperature growth;
D O I：
10.1143/JJAP.38.L105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111)(B) substrates. On (001)-oriented GaAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epilayer quality is presently limited by the purity of the available tertiarybutylhydrazine.
引用
收藏
页码：L105 / L107
页数：3
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