Mechanism for coupling between properties of interfaces and bulk semiconductors

被引：39

作者：

Dev, K ^{[1
]}

Jung, MYL ^{[1
]}

Gunawan, R ^{[1
]}

Braatz, RD ^{[1
]}

Seebauer, EG ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem Engn, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.68.195311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of Si(100)-SiO2 interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band-bending evolution during annealing show that the bending persists for substantial periods even above 1000 degreesC. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The findings have significant implications for p-n junction formation during complementary metal oxide semiconductor device processing.

引用

页数：6

共 47 条

[1]

AGARAWAL A, 2000, MRS P, V610

[2] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].