Measurements and analysis of the optimisation of HBT circuits for optical demodulator designs

被引：1

作者：

Langlois, PJ ^{[1
]}

Rezazadeh, AA ^{[1
]}

机构：

[1] Univ London Kings Coll, Dept Elect Engn, London WC2R 2LS, England

来源：

8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年

关键词：

D O I：

10.1109/EDMO.2000.919067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The second order non-linearity when using the base-emitter diode or the base-collector diode in an HBT for down conversion is analysed and measured. The non-linearity in the b-e circuit is shown to be at least beta times larger than the b-c diode circuit (> 90 times in the measured example). The contribution of the non-linearity of the current gain is identified. A circuit with added diodes is also examined.

引用

页码：242 / 247

页数：6

共 5 条

[1] A single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer [J].

Betser, Y ;

Ritter, D ;

Liu, CP ;

Seeds, AJ ;

Madjar, A .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1998, 16 (04) :605-609

[2]

LANGLOIS PJ, 1999, EDMO 99 NOV, P242

[3] Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer [J].

Liu, CP ;

Seeds, AJ ;

Wake, D .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (03) :72-74

[4]

*MET SOFTW INC, HSP US MAN, V2

[5]

SOTOODEH M, 1998, IEEE P 6 INT WORKSH, P219

← 1 →