Impact of Trap Creation at SiO2/Poly-Si Interface on Ultra-thin SiO2 Reliability

被引：0
|
作者：
Mitani, Y. [1 ]
Suzuki, M. [1 ]
Higashi, Y. [1 ]
Takaishi, R. [1 ]
机构：
[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa, Japan
来源：
2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2016年
关键词：
Semiconductor Device Reliability; Dielectric Breakdown; Hydrogen; Deuterium; Interface States; BREAKDOWN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The relationship between TDDB characteristics of the devices having ultrathin SiO2 as gate dielectrics and the hydrogen-related trap creation have been re-investigated from the viewpoint of the oxidation process dependence. In order to study the influence of hydrogen on the reliability, deuterium isotope effect has been used. As a result, the Weibull distributions of time-to-breakdown (t(BD)) depends on the oxidation process condition even under the same oxidation temperature. Trap creation at gate oxide interface strongly correlates to the dielectric breakdown in ultra-thin gate oxides However, this oxidation process dependence could not be explained only by the amount of hydrogen release from SiO2/Si substrate interface From the experimental results of low-voltage SILC, it can be concluded that not only the released hydrogen from SiO2/Si substrate interface but also those from Poly-Si/SiO2 interface correlates to the breakdown mechanisms.
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页数：5
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