Magnetic and transport properties of epitaxial Co2MnSi films

被引：11
作者：
Wang, WH [1 ]
Ren, XB
Wu, GH
Przybylski, M
Barthel, J
Kirschner, J
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3058565, Japan
[2] Chinese Acad Sci, Inst Phys, State Key Lab Megnetism, Beijing 100080, Peoples R China
[3] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
[4] AGH Univ Sci & Technol, Dept Solid State Phys, Fac Phys & Appl Comp Sci, PL-30059 Krakow, Poland
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期
关键词：
half metal; Heusler alloys; magnetic properties;
D O I：
10.1109/TMAG.2005.854833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on magnetic and magnetotransport properties of single-crystalline Co-2 MnSi films grown by using conventional pulsed laser deposition (PLD) method on moderately heated semiconductor GaAs(001) substrates. The films exhibit the expected high Curie temperature and a strong in-plane uniaxial magnetic anisotropy with the easy axis of magnetization along the [1-10] direction. A saturation magnetization of 950 emu/cm(3) was measured at 5 K. The temperature dependence of the resistivity shows metallic behavior down to low temperatures. At 5 K, a rather large negative magnetoresistance (MR) of 1.26% has also been observed.
引用
收藏
页码：2805 / 2807
页数：3
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