Structural characteristics of GeTe-rich GeTe-Sb2Te3 pseudobinary metastable crystals

被引:99
作者
Matsunaga, T. [1 ]
Morita, H. [1 ]
Kojima, R. [2 ]
Yamada, N. [2 ]
Kifune, K. [3 ]
Kubota, Y. [4 ]
Tabata, Y. [5 ]
Kim, J. -J. [6 ]
Kobata, M. [6 ]
Ikenaga, E. [6 ]
Kobayashi, K. [6 ]
机构
[1] Matsushita Elect Ind Co Ltd, Mat Sci & Anal Technol Ctr, Osaka 5708501, Japan
[2] Matsushita Elect Ind Co Ltd, AV Core Technol Dev Ctr, Osaka 5708501, Japan
[3] Osaka Prefecture Univ, Fac Liberal Arts & Sci, Osaka 5998531, Japan
[4] Osaka Prefecture Univ, Grad Sch Sci, Osaka 5998531, Japan
[5] Osaka Univ, Grad Sch Sci, Osaka 5600043, Japan
[6] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan
关键词
D O I
10.1063/1.2901187
中图分类号
O59 [应用物理学];
学科分类号
摘要
The (GeTe)(1-gamma)-(Sb2Te3)(gamma) pseudobinary system has, over almost its entire composition range, two kinds of crystalline phase: one is a metastable phase with a NaCl-type structure and the other is a spectrum of stable phases with homologous structures. In the metastable phase, Ge/Sb atoms and intrinsic vacancies occupy the Na sites; on the other hand, Te atoms are located at the Cl sites. These vacancies are produced by following gamma/1+2 gamma to ensure the stoichiometry of the metastable pseudobinary compound. This metastable phase obstinately holds its NaCl-type structure and resists transformation to stable homologous structures, even at high temperatures on the GeTe-rich side of the system. In GeTe (gamma=0), the NaCl-type atomic configuration itself is the stable structure. GeTe has, as is well known, a high-temperature cubic phase and a low-temperature rhombohedral phase. This GeTe and the pseudobinary compounds containing a small quantity of Sb2Te3 have their single-phase regions not on the GeTe-Sb2Te3 tie line but at Ge-poor sides off the line: in other words, the Na sites of these off-stoichiometric compounds have some excess vacancies besides the intrinsic vacancies. As Sb2Te3 is further added to GeTe, however, the structural transformation temperature continuously falls and the single-phase region converges on the tie line as the excess vacancies at the Na site disappear, which change its electrical property from metallic to semiconducting conductivity. The low-temperature rhombohedral phase is present up to near gamma=0.14. The NaCl-type metastable phase becomes unstable with increased Sb2Te3; after subjecting the compound Ge8Sb2Te11 (gamma=0.11) to heat treatment for 15 days at 773 K, a stable homologous structure appeared. (C) 2008 American Institute of Physics.
引用
收藏
页数:9
相关论文
共 22 条
[1]  
ABRIKOSOV NK, 1969, SEMICONDUCTING 2 6 4, P5501
[2]   AMORPHOUS VERSUS CRYSTALLINE GETE FILMS .3. ELECTRICAL PROPERTIES AND BAND STRUCTURE [J].
BAHL, SK ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (05) :2196-&
[3]   NEUTRON-DIFFRACTION STUDY ON THE STRUCTURAL PHASE-TRANSITION IN GETE [J].
CHATTOPADHYAY, T ;
BOUCHERLE, JX ;
VONSCHNERING, HG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1987, 20 (10) :1431-1440
[4]   A Rietveld-analysis program RIETAN-98 and its applications to zeolites [J].
Izumi, F ;
Ikeda, T .
EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 2000, 321-3 :198-203
[5]   An x-ray study of the mixed-layered compounds of (GeTe)n(Sb2Te3)m homologous series [J].
Karpinsky, OG ;
Shelimova, LE ;
Kretova, MA ;
Fleurial, JP .
JOURNAL OF ALLOYS AND COMPOUNDS, 1998, 268 (1-2) :112-117
[6]   Electronic structure of amorphous and crystalline (GeTe)1-x(Sb2Te3)x investigated using hard x-ray photoemission spectroscopy [J].
Kim, Jung-Jin ;
Kobayashi, Keisuke ;
Ikenaga, Eiji ;
Kobata, Masaaki ;
Ueda, Shigenori ;
Matsunaga, Toshiyuki ;
Kifune, Kouichi ;
Kojima, Rie ;
Yamada, Noboru .
PHYSICAL REVIEW B, 2007, 76 (11)
[7]   Single structure widely distributed in a GeTe-Sb2Te3 pseudobinary system:: A rock salt structure is retained by intrinsically containing an enormous number of vacancies within its crystal [J].
Matsunaga, T ;
Kojima, R ;
Yamada, N ;
Kifune, K ;
Kubota, Y ;
Tabata, Y ;
Takata, M .
INORGANIC CHEMISTRY, 2006, 45 (05) :2235-2241
[8]   Structural investigation of GeSb2Te4:: A high-speed phase-change material -: art. no. 104111 [J].
Matsunaga, T ;
Yamada, N .
PHYSICAL REVIEW B, 2004, 69 (10)
[9]   Crystallographic studies on high-speed phase-change materials used for rewritable optical recording disks [J].
Matsunaga, T ;
Yamada, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7B) :4704-4712
[10]   Structures of stable and metastable Ge2Sb2Te5, an intermetallic compound in GeTeSb2Te3 pseudobinary systems [J].
Matsunaga, T ;
Yamada, N ;
Kubota, Y .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE CRYSTAL ENGINEERING AND MATERIALS, 2004, 60 :685-691