Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots -: art. no. 035342

被引：28

作者：

Cornet, C ^{[1
]}

Platz, C ^{[1
]}

Caroff, P ^{[1
]}

Even, J ^{[1
]}

Labbé, C ^{[1
]}

Folliot, H ^{[1
]}

Le Corre, A ^{[1
]}

Loualiche, S ^{[1
]}

机构：

[1] LENS, FOTON, UMR 6082, CNRS,INSA Rennes, F-34043 Rennes, France

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.72.035342

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present new results on the simulation of two-dimensional (2D) quantum dot(s) (QDs) InAs/InP superlattices, emitting at 1.55 mu m, the optical telecommunication wavelength. QDs and wetting layer (WL) electronic energy states are close in such a system. Using the Fourier-transformed Schrodinger equation developed on a mixed basis, we describe the wetting layer-assisted inter-QDs lateral (WLaiQD) coupling by studying the influence of WL states on QDs states and vice versa. The results show that WL and QDs have to be considered as a unique system, in strong coupling conditions. The increase of QDs density on the WL leads to enhanced splitting and miniband effects on QDs states. It induces a fragmentation of WL density of states interpreted as a 0D-like confinement of WL states. A comparison is made with a real high QDs density sample. It is expected to have an impact on carrier-capture phenomena in optoelectronic devices using high-density QDs in the active region.

引用

页数：5

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