Revisiting the stopping powers of Si and SiO2 for 4He ions:: 0.5-2.0 MeV

被引:24
作者
Lennard, WN [1 ]
Xia, H
Kim, JK
机构
[1] Univ Western Ontario, Dept Phys & Astron, London, ON N6A 3K7, Canada
[2] Shandong Univ, Dept Phys, Shandong 250100, Peoples R China
[3] KIGAM, Taejon 305350, South Korea
基金
加拿大自然科学与工程研究理事会;
关键词
stopping power; silicon dioxide; Rutherford backscattering;
D O I
10.1016/j.nimb.2003.08.037
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Stopping cross-sections for He-4 ions in both amorphous Si and SiO2 have been investigated over the energy region 0.5-2.0 MeV using Rutherford backscattering spectrometry (RBS), with special emphasis on the experimental determination of Q x Omega - the charge x solid angle product. The solid angle has been determined via the use of Harwell Series II Bi-implanted Si specimens. We find no significant disagreement with experimental stopping powers reported for amorphous Si. For SiO2, our results are similar to3% smaller than recent measurements. Using Bragg's rule, a functional oxygen stopping cross-section useful for RBS analyses of condensed media targets has been extracted. The reasons for simulating measured pulse height spectra, as distinct from energy spectra, are delineated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:297 / 307
页数:11
相关论文
共 28 条
[1]  
[Anonymous], COMMUNICATION
[2]  
[Anonymous], 1977, HELIUM STOPPING POWE
[3]   Accurate determination of the stopping power of 4He in Si using Bayesian inference [J].
Barradas, NP ;
Jeynes, C ;
Webb, RP ;
Wendler, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 194 (01) :15-25
[4]   Influence of the chemical state on the stopping of protons and He-ions in some oxides [J].
Bauer, P ;
Golser, R ;
Semrad, D ;
Maier-Komor, P ;
Aumayr, F ;
Arnau, A .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :103-108
[5]   RUTHERFORD BACKSCATTERING AS A TOOL TO DETERMINE ELECTRONIC STOPPING POWERS IN SOLIDS [J].
BEHRISCH, R ;
SCHERZER, BM .
THIN SOLID FILMS, 1973, 19 (02) :247-257
[6]   The Si surface yield as a calibration standard for RBS [J].
Bianconi, M ;
Abel, F ;
Banks, JC ;
Font, AC ;
Cohen, C ;
Doyle, BL ;
Lotti, R ;
Lulli, G ;
Nipoti, R ;
Vickridge, I ;
Walsh, D ;
Wendler, E .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 :293-296
[7]   Accurate RBS measurement of ion implant doses in a silicon [J].
Boudreault, G ;
Jeynes, C ;
Wendler, E ;
Nejim, A ;
Webb, RP ;
Wätjen, U .
SURFACE AND INTERFACE ANALYSIS, 2002, 33 (06) :478-486
[8]  
Chu W. K., 1978, Backscattering Spectrometry
[9]   INTERCOMPARISON OF ABSOLUTE STANDARDS FOR RBS STUDIES [J].
COHEN, C ;
DAVIES, JA ;
DRIGO, AV ;
JACKMAN, TE .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :147-148
[10]   CALIBRATION OF THE HARWELL SERIES-II BI-IMPLANTED RBS STANDARDS [J].
DAVIES, JA ;
JACKMAN, TE ;
ESCHBACH, HL ;
DOBMA, W ;
WATJEN, U ;
CHIVERS, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6) :238-240