Piezotronics and piezo-phototronics with third-generation semiconductors

被引:136
作者
Wang, Zhong Lin [1 ,2 ]
Wu, Wenzhuo [3 ]
Falconi, Christian [2 ,4 ,5 ]
机构
[1] Georgia Inst Technol, Atlanta, GA 30332 USA
[2] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China
[3] Purdue Univ, Sch Ind Engn, W Lafayette, IN 47907 USA
[4] Univ Roma Tor Vergata, Rome, Italy
[5] Sungkyunkwan Univ, Seoul, South Korea
关键词
ATOMIC-LAYER MOS2; PIEZOELECTRIC NANOWIRE; FUNDAMENTAL THEORY; SENSOR MATRIX; TRANSPORT; FIELD; PHOTOCATALYSIS; NANOGENERATORS; PHOTODETECTOR; TRANSISTORS;
D O I
10.1557/mrs.2018.263
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
When uniform strain is applied to noncentrosymmetric semiconductor crystals, which are piezoelectric, static polarization charges are induced at the surface. If the applied strain is not uniform, these charges can even be created inside the crystal. The applied strain affects electronic transport and also photonic processes, and thus can be used to tune the material properties statically or dynamically. As a result, two new fields have emerged, namely piezotronics and piezo-phototronics. This article reviews the history of the two fields and gives a perspective on their applications. The articles in this issue of MRS Bulletin highlight progress in these two fields, and this article places this progress into perspective.
引用
收藏
页码:922 / 927
页数:6
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