Electrochemical Formation of a p-n Junction on Thin Film Silicon Deposited in Molten Salt

被引：53

作者：

Zou, Xingli ^{[1
]}

Ji, Li ^{[1
,2
]}

Yang, Xiao ^{[1
]}

Lim, Taeho ^{[1
]}

Yu, Edward T. ^{[2
]}

Bard, Allen J. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Chem, Ctr Electrochem, Austin, TX 78712 USA

[2] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2017年 / 139卷 / 45期

基金：

美国国家科学基金会;

关键词：

SOLAR-CELLS; ELECTRODEPOSITION;

D O I：

10.1021/jacs.7b09090

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior and photovoltaic effects, indicating promise for application in low-cost silicon thin film solar cells.

引用

页码：16060 / 16063

页数：4

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