Field-effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds

被引：5

作者：

Hoffmann, Rudolf C. ^{[1
]}

Differ, Stefan ^{[2
]}

Issanin, Alexander ^{[3
]}

Schneider, Joerg J. ^{[1
]}

机构：

[1] Tech Univ Darmstadt, Eduard Zintl Inst, Dept Chem, D-64287 Darmstadt, Germany

[2] Tech Univ Darmstadt, Dept Printing Technol, D-64283 Darmstadt, Germany

[3] Tech Univ Darmstadt, Surface Sci Grp, Dept Mat & Geosci, D-64287 Darmstadt, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 07期

关键词：

field-effect transistors; thin films; ZnO; PLASMA TREATMENT; ZNO; GROWTH; SINGLE; MOCVD; XPS;

D O I：

10.1002/pssa.201026694

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Solution processed zinc oxide thin films are derived from different organometallic alkoxyalkyl zinc compounds [Zn(OR1)R-2](4) and their performance in field-effect transistors (FETs) has been studied systematically. The influence of various residues R-1 or R-2 on the decomposition behaviour of the organometallic precursors and the resulting film morphology is discussed. The performance of the FETs could be enhanced by employment of a post-processing treatment with hydrogen plasma, leading to higher electron carrier mobilities as well as stable on/off ratios. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1708 / 1713

页数：6

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