Physics of deep submicron CMOS VLSI

The Integrated Circuit (IC) was invented in 1958, and modem CMOS was invented in 1980. The semiconductor physics that underlies the IC was discovered in the early part of the past century, and, by the early 60's, it was simplified and codified such that it could be used by engineers to design transistors of ever shrinking size and increasing performance. However, in recent years, the "Electrical Engineering Physics" of the 60's is becoming increasingly inadequate. Empirical corrections are being made to allow for quantum and non-equilibrium Boltzmann transport effects. Moreover, as features in CMOS transistors reach atomic dimensions, continuum physics is no longer adequate, and devices must be designed increasingly, at the atomic level. As transistors approach the end of scaling, the physics to design them will become increasingly complex, and Electrical Engineering Physics will no longer suffice.