Direct measurement of field effects on surface diffusion

被引：31

作者：

Carpinelli, JM ^{[1
]}

Swartzentruber, BS ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.58.R13423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present here a method for quantitatively determining tip effects on surface diffusion during a scanning tunneling microscopy experiment. Using the technique of atom tracking, we measure the bias voltage and tunnel current dependencies of adsorbed Si dimer dynamics on Si(001). Throughout the range of typical tunneling conditions, the activation barrier for diffusion varies by less than 3%. We also find a striking difference between the electric-field effects on dimer diffusion and rotation, indicating the importance of transition states for this system. [S0163-1829(98)52744-0].

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页码：13423 / 13425

页数：3

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