Electron Mobility Model for Strained-Si/(001) Si1-xGex

被引：2

作者：

An, Jiu-Hua ^{[1
]}

Zhang, He-Ming ^{[1
]}

Song, Jian-Jun ^{[1
]}

Wang, Xiao-Yan ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Minist Educ Wide Band Gap Semicond Mat &, Sch Microelect, Xian 710071, Peoples R China

来源：

OPTOELECTRONIC MATERIALS, PTS 1AND 2 | 2010年 / 663-665卷

关键词：

Strained-Si; Electron mobility; Scattering; TRANSPORT; SILICON; LAYERS; SI;

D O I：

10.4028/www.scientific.net/MSF.663-665.477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

There has been much interest in the Si-based strained technology lately. The improvement of strained-Si device performance is due to the enhancement of the mobility, so the further study on mobility is essential in both theory and practice aspects. In this paper, an analytical model of the electron mobility of strained-Si material, such as biaxial tensile strained-Si material grown on relaxed Si(1-x)Ge(x) (0 <= x <= 0.6) substrates, as a function of strain and different orientations is obtained. The results show that the electron mobilities for [100] and [010] orientations increase rapidly with increasing Ge fraction x, and there is no electron mobility enhancement for [001] orientation in comparison to relaxed Si material.

引用

页码：477 / 480

页数：4

共 10 条

[1]

Li S.S, 2006, SEMICONDUCTOR PHYS E, P185

[2] Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates [J].