Surface Potential Based Model of Ultra-Thin Fully Depleted SOI MOSFET for IC Simulations

被引：0
作者：
Rozeau, Olivier
Jaud, Marie-Anne
Poiroux, Thierry
Benosman, Mohamed
机构：
来源：
2011 IEEE INTERNATIONAL SOI CONFERENCE | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：22
相关论文
共 50 条
[21]   Subthreshold current model of fully depleted dual material gate SOI MOSFET [J].
苏军 ;
李尊朝 ;
张莉丽 .
Academic Journal of Xi'an Jiaotong University, 2007, (02) :135-137+171
[22]   An analytical model for the subthreshold current of fully depleted strained-SOI MOSFET [J].
Qin, Shanshan ;
Zhang, Heming ;
Hu, Huiyong ;
Xu, Xiaobo ;
Wang, Xiaoyan .
MECHANICAL AND AEROSPACE ENGINEERING, PTS 1-7, 2012, 110-116 :3332-3337
[23]   Comparisons and extension of recent surface potential models for fully depleted short-channel SOI MOSFET's [J].
Niu, GF ;
Chen, RMM ;
Ruan, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) :2034-2037
[24]   Calibrating 2D potential models for fully depleted SOI MOSFET's [J].
Cao, JG .
PROCEEDINGS OF THE TWELFTH BIENNIAL UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, 1997, :94-97
[25]   Ultra Thin Fully Depleted Active Pixel Sensors Processed on SOI Wafers [J].
Andricek, L. ;
Liemann, G. ;
Moser, H. -G. ;
Richter, R. H. ;
Schweinfest, B. .
2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
[26]   Surface roughness and device layer thickness for ultra-thin SOI [J].
Current, MI ;
Malik, IJ ;
Fuerfanger, M ;
Flat, A ;
Sullivan, J .
2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, :111-112
[27]   A continuous compact MOSFET model for fully- and partially-depleted SOI devices [J].
Sleight, JW ;
Rios, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (04) :821-825
[28]   Electrostatic Discharge Effects in Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques [J].
Griffoni, Alessio ;
Tazzoli, Augusto ;
Gerardin, Simone ;
Simoen, Eddy ;
Claeys, Cor ;
Meneghesso, Gaudenzio .
ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS - 2008, 2008, :59-+
[29]   Accurate analytical drain current model for a nanoscale fully-depleted SOI MOSFET [J].
Anvarifard, Mohammad K. ;
Orouji, Ali A. .
SOLID-STATE ELECTRONICS, 2015, 103 :154-161
[30]   A compact model for dual material gate stack (DUMGAS) fully depleted SOI MOSFET [J].
Zheng, Changyong ;
Xu, Tailong ;
Dai, Yuehua ;
Chen, Junning .
Journal of Information and Computational Science, 2013, 10 (13) :4233-4245
12345