Surface Potential Based Model of Ultra-Thin Fully Depleted SOI MOSFET for IC Simulations

被引：0
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作者：
Rozeau, Olivier
Jaud, Marie-Anne
Poiroux, Thierry
Benosman, Mohamed
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来源：
2011 IEEE INTERNATIONAL SOI CONFERENCE | 2011年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页数：22
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