An experimental investigation into soft-pad grinding of wire-sawn silicon wafers

被引:27
|
作者
Pei, ZJ
Kassir, S
Bhagavat, M
Fisher, GR
机构
[1] Kansas State Univ, Dept Ind & Mfg Syst Engn, Manhattan, KS 66506 USA
[2] Strasbaugh Inc, San Luis Obispo, CA 93401 USA
[3] MEMC Elect Mat Inc, St Peters, MO 63376 USA
基金
美国国家科学基金会;
关键词
grinding; lapping; machining; material removal; semiconductor material; silicon wafer; slicing;
D O I
10.1016/j.ijmachtools.2003.09.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon is the primary semiconductor material used to fabricate microchips. A series of processes are required to manufacture high-quality silicon wafers. Surface grinding is one of the processes used to flatten wire-sawn wafers. A major issue in grinding of wire-sawn wafers is reduction and elimination of wire-sawing induced waviness. Results of finite element analysis have shown that soft-pad grinding is very effective in reducing the waviness. This paper presents an experimental investigation into soft-pad grinding of wire-sawn silicon wafers. Wire-sawn wafers from a same silicon ingot were used for the study to ensure that these wafers have similar waviness. These wafers were ground using two different soft pads. As a comparison, some wafers were also ground on a rigid chuck. Effectiveness of soft-pad grinding in removing waviness has been clearly demonstrated. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:299 / 306
页数:8
相关论文
共 24 条
  • [1] Support vector regression in the analysis of soft-pad grinding of wire-sawn silicon wafers
    Shen, JD
    Pei, ZJ
    Lee, ES
    ISAS/CITSA 2004: International Conference on Cybernetics and Information Technologies, Systems and Applications and 10th International Conference on Information Systems Analysis and Synthesis, Vol 3, Proceedings, 2004, : 19 - 21
  • [2] Modelling and analysis of waviness reduction in soft-pad grinding of wire-sawn silicon wafers by support vector regression
    Shen, Judong
    Pei, Z. J.
    Lee, E. S.
    Fisher, G. R.
    INTERNATIONAL JOURNAL OF PRODUCTION RESEARCH, 2006, 44 (13) : 2605 - 2623
  • [3] Finite element analysis for grinding of wire-sawn silicon wafers: a designed experiment
    Pei, Z
    Xin, XJ
    Liu, W
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2003, 43 (01) : 7 - 16
  • [4] Finite Element Analysis for Grinding and Lapping of Wire-sawn Silicon Wafers
    Z J PEI
    X J XIN
    厦门大学学报(自然科学版), 2002, (S1) : 10 - 10
  • [5] Finite element analysis for grinding and lapping of wire-sawn silicon wafers
    Liu, WJ
    Pei, ZJ
    Xin, XJ
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2002, 129 (1-3) : 2 - 9
  • [6] Waviness removal in grinding of wire-sawn silicon wafers: 3D finite element analysis with designed experiments
    Sun, XK
    Pei, ZJ
    Xin, XJ
    Fouts, M
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2004, 44 (01) : 11 - 19
  • [7] A grinding-based manufacturing method for silicon wafers: an experimental investigation
    Pei, ZJ
    Fisher, GR
    Bhagavat, M
    Kassir, S
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE, 2005, 45 (10) : 1140 - 1151
  • [8] A study on the surface characteristics of diamond wire-sawn silicon wafer for photovoltaic application
    Lee, Kyoung-Hee
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2011, 21 (06): : 225 - 229
  • [9] Prediction of the thickness for silicon wafers sawn by diamond wire saw
    Liu, Tengyun
    Ge, Peiqi
    Bi, Wenbo
    Wang, Peizhi
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 71 : 133 - 138
  • [10] Fracture strength of silicon wafers sawn by fixed diamond wire saw
    Liu, Tengyun
    Ge, Peiqi
    Bi, Wenbo
    Wang, Peizhi
    SOLAR ENERGY, 2017, 157 : 427 - 433