Using multi-threshold threshold gates in RTD-based logic design: A case study

被引：16

作者：

Pettenghi, Hector ^{[1
]}

Avedillo, Maria J. ^{[1
,2
]}

Quintana, Jose M. ^{[1
,2
]}

机构：

[1] Ctr Nacl Microelect, Inst Microelect, Seville 41012, Spain

[2] Univ Seville, Dept Elect & Electromagnetismo, Seville, Spain

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 02期

关键词：

resonant tunneling diodes; MOBILE; multi-threshold threshold gate; nanopipelining;

D O I：

10.1016/j.mejo.2007.05.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The basic building blocks for resonant tunneling diode (RTD) logic circuits are threshold gates (TGs) instead of the conventional Boolean gates (AND, OR, NAND, NOR) due to the fact that, when designing with RTDs, TGs can be implemented as efficiently as conventional ones, but realize more complex functions. Recently, RTD structures implementing multi-threshold threshold gates (MTTGs) have been proposed which further increase the functionality of the original TGs while maintaining their operating principle and allowing also the implementation of nanopipelining at the gate level. This paper describes the design of n-bit adders using these MTTGs. A comparison with a design based on TGs is carried out showing advantages in terms of power consumption and power delay product. (C) 2007 Elsevier Ltd. All rights reserved.

引用

页码：241 / 247

页数：7

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