X-parameter modelling of GaN HEMT based on neural network

被引：6

作者：

Lei, Niu ^{[1
]}

Jiang, Feiyan ^{[1
]}

Sun, Lu ^{[1
]}

机构：

[1] Xidian Univ, Sch Electromech Engn, 2 SOUTH TaiBai Rd, Xian 710071, Shaanxi, Peoples R China

来源：

JOURNAL OF ENGINEERING-JOE | 2019年 / 2019卷 / 23期

基金：

中国国家自然科学基金;

关键词：

high electron mobility transistors; wideband amplifiers; microwave circuits; gallium compounds; power amplifiers; backpropagation; neural nets; mathematics computing; III-V semiconductors; electrical engineering computing; GaN; ADS software; model prediction data; MATLAB neural network box; BP neural network; X-parameter generator; GaN HEMT device CGH40010F; artificial neural network; nonlinearity; large-signal conditions; linear small-signal conditions; microwave circuit; S-parameters; X-parameter modelling; DESIGN; RF;

D O I：

10.1049/joe.2018.9156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Currently, S-parameters are commonly used in the design, measurement, and modelling of microwave circuits, but it is only suitable for linear small-signal conditions and not suitable for large-signal conditions. X-parameter is more accurate than the S-parameter in characterising the non-linearity of the device or the microwave circuit, and the artificial neural network has significant advantages in predicting the non-linearity of the system. Based on theoretical analysis, this article selects the GaN HEMT device CGH40010F for X-parameter modelling. Using X-parameter generator of ADS software, the X-parameters of the device were obtained. An X-parameter model based on BP neural network was built using MATLAB neural network box. The accuracy of the model was verified by comparing the test data with the model prediction data.

引用

页码：8955 / 8958

页数：4

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