Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells

被引：0

作者：

Ciano, C. ^{[1
]}

Montanari, M. ^{[1
,2
]}

Graziotto, L. ^{[3
]}

Persichetti, L. ^{[1
]}

Corley, C. ^{[4
]}

Baldassarre, L. ^{[3
]}

Ortolani, M. ^{[3
]}

Di Gaspare, L. ^{[1
]}

Capellini, G. ^{[1
,4
]}

Stark, D. ^{[5
]}

Scalari, G. ^{[5
]}

Virgilio, M. ^{[6
]}

De Seta, M. ^{[1
]}

机构：

[1] Univ Roma Tre, Dipartimento Sci, I-00154 Rome, Italy

[2] Univ Firenze, Dipartimenti Fis & Astron, I-50019 Sesto Fiorentino, Italy

[3] Sapienza Univ Roma, Dipartimento Fis, I-00185 Rome, Italy

[4] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[5] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[6] Univ Pisa, I-56127 Pisa, Italy

来源：

2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ) | 2021年

关键词：

ABSORPTION;

D O I：

10.1109/IRMMW-THz50926.2021.9567472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge/SiGe heterostructures are promising in the view of silicon-foundry compatible THz optoelectronic applications. Here we present a structural and optical characterization of Ge/SiGe parabolic quantum wells that represent ideal systems for room-temperature THz emission and strong light-matter coupling investigation.

引用

页数：2

共 8 条

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