Path integral approach to dissipation in solid-state qubits

被引：1
|
作者：
Reina, John H. [1 ]
Bririd, Adel [2 ]
机构：
[1] Univ Valle, Dept Fis, Cali 25360, Colombia
[2] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England
来源：
MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 3-4期
关键词：
quantum dissipation; path integral; non-Markovian quantum dynamics; nanostructures;
D O I：
10.1016/j.mejo.2007.09.011
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We provide a full numerical characterization of non-Markovian quantum decoherence for a two-level (qubit) system coupled to a tailorable reservoir by studying the influence of different factors, such as system-reservoir coupling and temperature. The necessity of a decoherence analysis from short to long time ranges and for a large set of parameters are fundamental requirements for quantum information processing in order to produce a controlled conditional quantum dynamics. We show how the Feynman-Vernon influence functional technique can be used in order to obtain a numerical algorithm that enables a full characterization of non-Markovian processes. This analysis paves the way for modeling the prevention and control of decoherence in solid-state systems with ultrafast dynamics and strong environmental coupling. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：696 / 698
页数：3
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