Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates

被引:5
作者
Cohin, Yann [1 ,2 ]
Glas, Frank [2 ]
Cattoni, Andrea [2 ]
Bouchoule, Sophie [2 ]
Mauguin, Olivia [2 ]
Largeau, Ludovic [2 ]
Patriarche, Gilles [2 ]
Sondergard, Elin [1 ]
Harmand, Jean-Christophe [2 ]
机构
[1] St Gobain, Surface Verre & Interfaces, CNRS, UMR 125, F-93303 Aubervilliers, France
[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
关键词
ALUMINUM-INDUCED CRYSTALLIZATION; AL-INDUCED CRYSTALLIZATION; INDUCED LAYER EXCHANGE; SILICON SOLAR-CELLS; THIN-FILM; AMORPHOUS-SILICON; TEMPERATURE; GLASS; PERFORMANCE; FABRICATION;
D O I
10.1021/cg5016548
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Fiber-textured polycrystalline silicon thin films have demonstrated their interest as seed layers for the epitaxial growth of high-quality materials on substrates such as glass or plastics. In the present work, we report a comprehensive study of the aluminum-induced crystallization (AIC) of isolated Si domains. Our study not only demonstrates the fabrication by AIC of shape- and size-controlled Si monocrystals at the nanoscale but also allows for the prediction of minimal annealing conditions for complete crystallization of such structures. These ultrathin [111]-oriented monocrystals are promising candidates as selected-area epitaxy substrates with both an easy control on the morphology of these structures and a low-temperature fabrication process.
引用
收藏
页码:2102 / 2109
页数:8
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