Low-temperature, direct synthesis of β-SiC by metal vapor vacuum arc ion source implantation

Crystalline beta -SiC surface layers with strong (111) preferred orientation were synthesized by direct ion implantation into Si(111) substrates at a low temperature of 400 degreesC using a metal vapor vacuum are ion source. Both X-ray diffraction and Fourier transform infrared spectroscopy reveal an augment in the amount of beta -SiC with increasing implantation doses at 400 degreesC. Scanning electron microscopy shows the formation of an almost continuous SiC surface layer after implantation at 400 degreesC with a dose of 7 x 10(17)/cm(2). The full width at half maximum of the X-ray rocking curve of beta -SiC(111) was measured to be 1.4 degrees for the sample implanted at a dose of 2 x 10(17)/cm(2) at 700 degreesC, revealing a good alignment of beta -SiC with the Si matrix. (C) 2001 Elsevier Science B.V. All rights reserved.