Observation of etch pits of β-FeSi2 single crystals

被引：18

作者：

Udono, H ^{[1
]}

Kikuma, I ^{[1
]}

机构：

[1] Ibaraki Univ, Fac Engn, Dept Elect & Elect, Hitachi, Ibaraki 3168511, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 6A期

关键词：

beta-FeSi2; single crystal; etch pit; etching; p-type; bulk;

D O I：

10.1143/JJAP.40.4164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed etch pits of p-type beta -FeSi2 single crystals grown by the temperature gradient solution growth method. Characteristic etch pits which depend on the surface orientation of the crystals were observed on the surface etched by diluted hydrofluoric acid and HF : HNO3 : H2O = 1 : 2 : 2-8 solutions. These etchants are suitable for the observation of etch pits and surface orientation of beta -FeSi2 single crystals.

引用

页码：4164 / 4165

页数：2

共 6 条

[1] IMPURITY BAND IN P-TYPE BETA-FESI2 [J].

ARUSHANOV, E ;

KLOC, C ;

BUCHER, E .

PHYSICAL REVIEW B, 1994, 50 (04) :2653-2656

[2] OBSERVATION OF ETCHING OF N-TYPE SILICON IN AQUEOUS HF SOLUTIONS [J].

HU, SM ;

KERR, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (04) :414-&

[3] Effect of surface oxidation on Raman spectroscopy of β-FeSi2 [J].

Maeda, Y ;

Miyake, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7A) :4051-4052

[4] Ellipsometric comparison of the native oxides of silicon and semiconducting iron disilicide (β-FeSi2) [J].

Rebien, M ;

Henrion, W ;

Angermann, H ;

Röseler, A .

SURFACE SCIENCE, 2000, 462 (1-3) :143-150

[5] Solution growth of single-phase β-FeSi2 bulk crystals [J].

Udono, H ;

Kikuma, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (3AB) :L225-L226

[6] β-FeSi2 single crystals grown from solution [J].

Udono, H ;

Kikuma, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A) :1367-1369

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