Study of the proximity effect in high q inductors for wireless LAN (WLAN)

被引：0

作者：

Cendoya, I ^{[1
]}

Mendizabal, J ^{[1
]}

Sainz, N ^{[1
]}

Gutiérrez, I ^{[1
]}

Alvarado, U ^{[1
]}

de Nó, J ^{[1
]}

机构：

[1] Univ Navarra, Escuela Super Ingn Ind San Sebastian, San Sebastian 20018, Spain

来源：

VLSI CIRCUITS AND SYSTEMS II, PTS 1 AND 2 | 2005年 / 5837卷

关键词：

inductor; proximity effect; quality factor (Q); WLAN;

D O I：

10.1117/12.608358

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The quality factor (Q) measures the ability of a component to preserve the energy received during the circuit operation. Q is the most important parameter in an inductor. It is mainly limited by the loss due to inductor metal resistance, substrate resistance, and the resistance associated with induced Eddy current below the inductor metal trace. One of the pernicious effects for the Q of an inductor is the proximity effect. Proximity effect is caused by the magnetic field generated by the own inductor and induces parasitic currents in the metal tracks causing an increase in the resistance and thus diminishing the Q. The objective of this paper is to study this effect and consequently to obtain some inductor design rules, which allow the designer to implement high quality inductors. This paper is focused on balanced inductors for a WLAN application using CMOS 0.18 mu m technology.

引用

页码：1032 / 1038

页数：7

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