Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications

被引：108
作者：
Singh, NB
Suhre, DR
Balakrishna, V
Marable, M
Meyer, R
Fernelius, N
Hopkins, FK
Zelmon, D
机构：
[1] Northrop Grumman Corp, Elect Sensors & Syst Div, Ctr Sci & Technol, Pittsburgh, PA 15235 USA
[2] Wright Res Lab, Mat Directorate, Wright Patterson AFB, OH 45433 USA
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1998年 / 37卷 / 01期
关键词：
D O I：
10.1016/S0960-8974(98)00013-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
[No abstract available]
引用
收藏
页码：47 / 102
页数：56
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