Measurement of gain current relations for InGaN multiple quantum wells

被引：9

作者：

Abare, AC ^{[1
]}

Mack, MP

Hansen, M

Speck, JS

Coldren, LA

DenBaars, SP

Meyer, GA

Lehew, SL

Cooper, GA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn & Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed operation of in-plane laser diodes with InGaN multiple quantum well active regions was achieved. For uncoated chemically assisted ion beam etched facets, we obtained threshold current densities as low as 10.6 kA/cm(2). The external differential quantum efficiency dependence on bar length was used to determine the internal optical loss and internal quantum efficiency of these devices and to calculate the modal gain in the device as a function of the terminal current density. Values of facet reflection were determined by a self-consistent analysis. We have measured 90 cm(-1) of modal gain and estimate material gain exceeding 900 cm(-1), at 20 kA/cm(2). (C) 1998 American Institute of Physics. [S0003-6951(98)00652- 4].

引用

页码：3887 / 3889

页数：3

共 10 条

[1]

Coldren L. A., 2012, DIODE LASERS PHOTONI, V218

[2] Gain spectra in cw InGaN/GaN MQW laser diodes [J].

Deguchi, T ;

Azuhata, T ;

Sota, T ;

Chichibu, S ;

Nakamura, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :251-255

[3]

DOMEN K, 1998, MRS INTERNET J NITRI, V3

[4] Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching [J].

Kneissl, M ;

Bour, DP ;

Johnson, NM ;

Romano, LT ;

Krusor, BS ;

Donaldson, R ;

Walker, J ;

Dunnrowicz, C .

APPLIED PHYSICS LETTERS, 1998, 72 (13) :1539-1541

[5] Gain spectroscopy on InGaN/GaN quantum well diodes [J].

Kuball, M ;

Jeon, ES ;

Song, YK ;

Nurmikko, AV ;

Kozodoy, P ;

Abare, A ;

Keller, S ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP ;

Steigerwald, DA .

APPLIED PHYSICS LETTERS, 1997, 70 (19) :2580-2582

[6] Improvement of GaN-based laser diode facets by FIB polishing [J].

Mack, MP ;

Via, GD ;

Abare, AC ;

Hansen, M ;

Kozodoy, P ;

Keller, S ;

Speck, JS ;

Mishra, UK ;

Coldren, LA ;

DenBaars, SP .

ELECTRONICS LETTERS, 1998, 34 (13) :1315-1316

[7]

Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.

[8] Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1996, 69 (11) :1568-1570

[9]

Nakamura S., 1997, BLUE LASER DIODE GAN

[10] Photoluminescence characteristics of GaN/InGaN/GaN quantum wells [J].

Shmagin, IK ;

Muth, JF ;

Kolbas, RM ;

Krishnankutty, S ;

Keller, S ;

Abare, AC ;

Coldren, LA ;

Mishra, UK ;

DenBaars, SP .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :325-329

← 1 →