Simple two-step fabrication method of Bi2Te3 nanowires

被引：16

作者：

Kang, Joohoon ^{[1
]}

Noh, Jin-Seo ^{[1
]}

Lee, Wooyoung ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

DIMENSIONAL THERMOELECTRIC-MATERIALS; ON-FILM FORMATION; BISMUTH TELLURIDE; TOPOLOGICAL INSULATORS; ELECTRODEPOSITION; GROWTH; ARRAYS;

D O I：

10.1186/1556-276X-6-277

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bismuth telluride (Bi2Te3) is an attractive material for both thermoelectric and topological insulator applications. Its performance is expected to be greatly improved when the material takes nanowire structures. However, it is very difficult to grow high-quality Bi2Te3 nanowires. In this study, a simple and reliable method for the growth of Bi2Te3 nanowires is reported, which uses post-sputtering and annealing in combination with the conventional method involving on-film formation of nanowires. Transmission electron microscopy study shows that Bi2Te3 nanowires grown by our technique are highly single-crystalline and oriented along [110] direction.

引用

页数：4

共 19 条

[1] Low-dimensional thermoelectric materials [J].