Simulation of silicon micromachined ultrasonic transducers

被引:1
|
作者
Ge, LF [1 ]
机构
[1] Anhui Univ, Sch Comp Sci & Informat Engn, Hefei 230039, Peoples R China
来源
FIFTH INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION AND CONTROL TECHNOLOGY | 2003年 / 5253卷
关键词
ultrasonic transducer; silicon micromachined; electrostatic; capacitive; simulation; modeling;
D O I
10.1117/12.521356
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A general 3-D TDK model developed further in this paper has been successfully applied to simulate a surface micromachimned electrostatic or capacitive ultrasonic transducer with vacuum-sealed air-cavities (i.e cMUT). Also, the paper gives a reliable prediction of resonant and anti-resonant frequencies of a typical cMUT.
引用
收藏
页码:15 / 18
页数:4
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