High-efficiency InGaN red micro-LEDs for visible light communication

被引：49
|
作者：
Huang, Yu-Ming [1 ,2 ,3 ]
Peng, Chun-Yen [3 ]
Miao, Wen-Chien [3 ]
Chiang, Hsin [1 ,3 ]
Lee, Tzu-Yi [1 ]
Chang, Yun-Han [1 ]
Singh, Konthoujam James [1 ]
Iida, Z. Daisuke [4 ]
Horng, Ray-Hua [5 ]
Chow, Chi-Wai [1 ]
Lin, Chien-Chung [2 ,6 ]
Ohkawa, Kazuhiro [4 ]
Chen, Shih-Chen [3 ]
Kuo, Hao-Chung [1 ,3 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Coll Elect & Comp Engn, Dept Photon, Hsinchu 30010, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Inst Photon Syst, Tainan 71150, Taiwan
[3] Hon Hai Res Inst, Semicond Res Ctr, Taipei 11492, Taiwan
[4] King Abdullah Univ Sci & Technol KAUS7, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia
[5] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan
[6] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
来源：
PHOTONICS RESEARCH | 2022年 / 10卷 / 08期
关键词：
EMITTING-DIODES; PERFORMANCE; EMISSION;
D O I：
10.1364/PRJ.462050
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm(2). The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6x 25-mu m-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm(2). It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies. (C) 2022 Chinese Laser Press
引用
收藏
页码：1978 / 1986
页数：9
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