High-efficiency InGaN red micro-LEDs for visible light communication

被引：49

作者：

Huang, Yu-Ming ^{[1
,2
,3
]}

Peng, Chun-Yen ^{[3
]}

Miao, Wen-Chien ^{[3
]}

Chiang, Hsin ^{[1
,3
]}

Lee, Tzu-Yi ^{[1
]}

Chang, Yun-Han ^{[1
]}

Singh, Konthoujam James ^{[1
]}

Iida, Z. Daisuke ^{[4
]}

Horng, Ray-Hua ^{[5
]}

Chow, Chi-Wai ^{[1
]}

Lin, Chien-Chung ^{[2
,6
]}

Ohkawa, Kazuhiro ^{[4
]}

Chen, Shih-Chen ^{[3
]}

Kuo, Hao-Chung ^{[1
,3
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Coll Elect & Comp Engn, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Inst Photon Syst, Tainan 71150, Taiwan

[3] Hon Hai Res Inst, Semicond Res Ctr, Taipei 11492, Taiwan

[4] King Abdullah Univ Sci & Technol KAUS7, Comp Elect & Math Sci & Engn CEMSE Div, Thuwal 239556900, Saudi Arabia

[5] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[6] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

来源：

PHOTONICS RESEARCH | 2022年 / 10卷 / 08期

关键词：

EMITTING-DIODES; PERFORMANCE; EMISSION;

D O I：

10.1364/PRJ.462050

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm(2). The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6x 25-mu m-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm(2). It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies. (C) 2022 Chinese Laser Press

引用

页码：1978 / 1986

页数：9

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