Nitrogen implantation into graphene oxide and reduced graphene oxides using radio frequency plasma treatment in microscale

被引：17

作者：

Bertoti, Imre ^{[1
]}

Farah, Shereen ^{[2
]}

Bulatko, Anna ^{[2
]}

Farkas, Attila ^{[3
]}

Madarasz, Janos ^{[4
]}

Mohai, Miklos ^{[1
]}

Safran, Gyorgy ^{[5
]}

Laszlo, Krisztina ^{[2
]}

机构：

[1] Eotvos Lorand Res Network, Inst Mat & Environm Chem, Res Ctr Nat Sci, Budapest, Hungary

[2] Budapest Univ Technol & Econ, Dept Phys Chem & Mat Sci, Budapest, Hungary

[3] Budapest Univ Technol & Econ, Dept Organ Chem & Technol, Budapest, Hungary

[4] Budapest Univ Technol & Econ, Dept Inorgan & Analyt Chem, Budapest, Hungary

[5] Eotvos Lorand Res Network, Res Inst Tech Phys & Mat Sci, Budapest, Hungary

来源：

CARBON | 2022年 / 199卷

基金：

欧盟地平线“2020”;

关键词：

Graphene oxide (GO); Reduced GO; Plasma treatment; Ambient temperature; Surface modification; X-ray photoelectron spectroscopy (XPS); Stability; DOPED GRAPHENE; SURFACE MODIFICATION; RAMAN-SPECTRA; REDUCTION; GRAPHITE; SHEETS; FUNCTIONALIZATION; CHEMISTRY; THICKNESS; OXIDATION;

D O I：

10.1016/j.carbon.2022.08.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Solvent-free radiofrequency (RF) nitrogen plasma treatment was applied to incorporate nitrogen atoms in relatively high concentration. Graphene oxide (GO) and two reduced GOs of different O-content were used as target substrates to reveal the influence of the functional groups decorating the graphene lattice on the quantity and quality of nitrogen incorporation. Despite the relatively high oxygen content of the samples no N-O bonds develop but three kinds of different N-C bonds of very similar concentration are formed. Reduction of the GO removed the O-groups but did not heal the vacancies where N doping may occur. After two days the implanted N content drops, the N1 state (sp(2) N in pyridine ring, C-N-C) showing the least stability.

引用

页码：415 / 423

页数：9

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