Ultrafast laser-induced crystallization of amorphous silicon films

被引：78

作者：

Choi, TY ^{[1
]}

Hwang, DJ

Grigoropoulos, CP

机构：

[1] Swiss Fed Inst Technol, Inst Energy Technol, CH-8092 Zurich, Switzerland

[2] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

OPTICAL ENGINEERING | 2003年 / 42卷 / 11期

关键词：

ultrashort; amorphous silicon; pump and probe; ultrafast phase transition; crystallization;

D O I：

10.1117/1.1617312

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Ultrashort pulsed laser irradiation is used to crystallize 100-nm amorphous-si I icon (a-Si) films. The crystallization process is observed by time-resolved pump-and-probe reflection imaging in the range of 0.2 ps to 100 ns. The in-situ images, in conjunction with postprocessed scanning electron microscopy (SEM) and atomic force microscopy (AFM) mapping of the crystallized structure, provide evidence for nonthermal ultra-fast phase transition and subsequent surface-initiated crystallization. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

引用

页码：3383 / 3388

页数：6

共 26 条

[1]

Born M., 1999, PRINCIPLES OPTICS

[2] Nonlinear absorption of a picosecond pulse in a-Si:H [J].

Bugaev, AA ;

Kon'kov, OI ;

Terukov, EI .

PHYSICS OF THE SOLID STATE, 2000, 42 (02) :241-243

[3] FEMTOSECOND IMAGING OF MELTING AND EVAPORATION AT A PHOTOEXCITED SILICON SURFACE [J].

DOWNER, MC ;

FORK, RL ;

SHANK, CV .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :595-599

[4]

Dyer T. E., 1993, Journal of Non-Crystalline Solids, V164-166, P1001, DOI 10.1016/0022-3093(93)91167-2

[5]

Edwards D.F., 1985, Handbook of optical constants of solids

[6] 2ND HARMONIC-GENERATION IN CENTRO-SYMMETRIC SEMICONDUCTORS [J].

GUIDOTTI, D ;

DRISCOLL, TA ;

GERRITSEN, HJ .

SOLID STATE COMMUNICATIONS, 1983, 46 (04) :337-340

[7] Ultrafast all-optical switching in a silicon-based photonic crystal [J].

Haché, A ;

Bourgeois, M .

APPLIED PHYSICS LETTERS, 2000, 77 (25) :4089-4091

[8] In situ and ex situ diagnostics on melting and resolidification dynamics of amorphous and polycrystalline silicon thin films during excimer laser annealing [J].

Hatano, M ;

Moon, S ;

Lee, MH ;

Suzuki, K ;

Grigoropoulos, CP .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :654-658

[9] GaAs under intense ultrafast excitation: Response of the dielectric function [J].

Huang, L ;

Callan, JP ;

Glezer, EN ;

Mazur, E .

PHYSICAL REVIEW LETTERS, 1998, 80 (01) :185-188

[10] MEASUREMENTS OF THE OPTICAL-PROPERTIES OF LIQUID SILICON AND GERMANIUM USING NANOSECOND TIME-RESOLVED ELLIPSOMETRY [J].

JELLISON, GE ;

LOWNDES, DH .

APPLIED PHYSICS LETTERS, 1987, 51 (05) :352-354

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