Self-forming diffusion barrier layer in Cu-Mn alloy metallization

被引:230
作者
Koike, J [1 ]
Wada, M [1 ]
机构
[1] Tohoku Univ, Dept Mat Sci, Aoba Ku, Sendai, Miyagi 9808579, Japan
关键词
D O I
10.1063/1.1993759
中图分类号
O59 [应用物理学];
学科分类号
摘要
Advancement of semiconductor devices requires the realization of an ultrathin diffusion barrier layer between Cu interconnect and insulating layers. The present work investigated the possibility of the self-forming barrier layer in Cu-Mn alloy thin films deposited directly on SiO2. After annealing at 450 degrees C for 30 min, a Mn containing amorphous oxide layer of 3-4 nm in thickness was formed uniformly at the interface. Residual Mn atoms were removed to form a surface oxide layer, leading to a drastic resistivity decrease of the film. No interdiffusion was detected between Cu and SiO2 within the detection limit of x-ray energy dispersive spectroscopy. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 18 条
[1]   Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity [J].
Barmak, K ;
Gungor, A ;
Cabral, C ;
Harper, JME .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1605-1616
[2]   OXIDATION-RESISTANT HIGH-CONDUCTIVITY COPPER-FILMS [J].
DING, PJ ;
LANFORD, WA ;
HYMES, S ;
MURARKA, SP .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2897-2899
[3]   EFFECTS OF THE ADDITION OF SMALL AMOUNTS OF AL TO COPPER - CORROSION, RESISTIVITY, ADHESION, MORPHOLOGY, AND DIFFUSION [J].
DING, PJ ;
LANFORD, WA ;
HYMES, S ;
MURARKA, SP .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3627-3631
[4]   Interfacial phase formation in Cu-Mg alloy films on SiO2 [J].
Frederick, MJ ;
Ramanath, G .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) :3202-3205
[5]   Kinetics of interfacial reaction in Cu-Mg alloy films on SiO2 [J].
Frederick, MJ ;
Ramanath, G .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) :363-366
[6]   Sequence of Mg segregation, grain growth, and interfacial MgO formation in Cu-Mg alloy films on SiO2 during vacuum annealing [J].
Frederick, MJ ;
Goswami, R ;
Ramanath, G .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) :5966-5972
[7]   Activity measurement of the constituents in liquid Cu-Mg and Cu-Ca alloys with mass spectrometry [J].
Hino, M ;
Nagasaka, T ;
Takehama, R .
METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 2000, 31 (05) :927-935
[8]   Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing [J].
Kim, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2231-2261
[9]   Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization [J].
Krishnamoorthy, A ;
Chanda, K ;
Murarka, SP ;
Ramanath, G ;
Ryan, JG .
APPLIED PHYSICS LETTERS, 2001, 78 (17) :2467-2469
[10]   LOW-TEMPERATURE PASSIVATION OF COPPER BY DOPING WITH AL OR MG [J].
LANFORD, WA ;
DING, PJ ;
WANG, W ;
HYMES, S ;
MURAKA, SP .
THIN SOLID FILMS, 1995, 262 (1-2) :234-241