Influence of gamma radiation on the electrical properties of MnO and MnO/TeO2 thin films

被引：15

作者：

Arshak, K ^{[1
]}

Korostynska, O ^{[1
]}

机构：

[1] Univ Limerick, Dept Elect & Comp Engn, Limerick, Ireland

来源：

ANNALEN DER PHYSIK | 2004年 / 13卷 / 1-2期

关键词：

manganese oxide; tellurium dioxide; thin films; gamma radiation;

D O I：

10.1002/andp.200310059

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The pure and mixed oxide materials, such as manganese oxide (MnO) and tellurium dioxide (TeO2), in the form of thermally deposited thin films were studied in terms of their susceptibility to gamma radiation exposure. Radiation-induced changes in their electrical proper-ties indicated the level of radiation damage. These thin film devices showed increase in values of current by the increase in the radiation dose. The dose response was found to be composition- and thickness-dependant. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinhem.

引用

页码：87 / 89

页数：3

共 4 条

[1]

Arshak K., 2003, Sensor Review, V23, P48, DOI 10.1108/02602280310457965

[2]

Arshak K, 2002, INT CONF MICROELECTR, P357, DOI 10.1109/MIEL.2002.1003210

[3] Influence of γ radiation on thin Ta2O5-Si structures [J].

Atanassova, E ;

Paskaleva, A ;

Konakova, R ;

Spassov, D ;

Mitin, VF .

MICROELECTRONICS JOURNAL, 2001, 32 (07) :553-562

[4] Radiation damage in scintillating crystals [J].

Zhu, RY .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1998, 413 (2-3) :297-311

← 1 →