SnO2 RGTO UV activation for CO monitoring

被引：39

作者：

Comini, E ^{[1
]}

Ottini, L ^{[1
]}

Faglia, G ^{[1
]}

Sberveglieri, G ^{[1
]}

机构：

[1] INFM, Dept Chim Fis Ingn & Mat, Gas Sensor Lab, Brescia, Italy

来源：

IEEE SENSORS JOURNAL | 2004年 / 4卷 / 01期

关键词：

CO monitoring; gas sensors; tin-oxide sensor;

D O I：

10.1109/JSEN.2003.822216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present recent results regarding the activation of sensors with high density power light of energy in the range of the energy gap of the semiconductor. We report the measurements registered for tin-oxide rheotaxial growth and thermal oxidation deposited layers using CO as a target gas. The influence of doping on the activated gas-sensing properties has been investigated. We have found the value of the incident power corresponding to the best gas-sensing performances (response enhancement and kinetics). The comparison between dark and irradiation condition is presented for the different kind of layers tested.

引用

页码：17 / 20

页数：4

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