Comment on "Schottky diodes with a δ-doped near-surface layer" [J. Appl. Phys. 90, 6205 (2001)]

The influence of planar delta-doping on the effective parameters of Schottky diodes was modeled by J. Osvald [J. Appl. Phys. 90, 6205 (2001)]. In this Comment we emphasize that the proposed analysis based on the drift-diffusion model does not seem to be fully correct for the system in question. Neglect of the tunneling effects in Schottky diode with isotype delta-layer inserted near the metal-semiconductor interface leads to wrong speculations about the effective barrier height and ideality factor. (C) 2004 American Institute of Physics.