AlGaAs/InGaAs PHEMT with multiple quantum wire gates

Data are presented on AlGaAs/InGaAs PHEMTs with multi-quantum wire channels. In these devices, the 20 mu m wide gates split to 27 wires with similar to 46 nm widths using holographic lithography and wet etching techniques. The effective width of the 15 nm thick InGaAs wire channel, determined by the 10 K photoluminescence, is as small as 22 nm. The fabricated device with a 2 Am gate length exhibits good current saturation and pinch-off characteristics at 300 K, with a zero gate drain current of 18.8 mu A and the threshold voltage of -0.8 V. The maximum transconductance is 0.27 mS. (c) 2005 Elsevier Ltd. All rights reserved.